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#1. Subthreshold slope - Wikipedia
The subthreshold slope is a feature of a MOSFET's current–voltage characteristic. In the subthreshold region, the drain current behaviour – though being ...
#2. Subthreshold Slope - an overview | ScienceDirect Topics
Subthreshold Slope. SS is defined as:(3.3)SS=[d(log10ID)dVG]−1where ln10·kTq≅60mV. From: Semiconductor ...
#3. 亞閾值擺幅_百度百科
中文名. 亞閾值擺幅 · 外文名. Subthreshold swing · 別名. S因子 · 公式. S = dVg / d(logIds) · 單位. mV/dec · 性能指標. 開啓關斷速率.
#4. On Device Architectures, Subthreshold Swing, and Power ...
relations governing the subthreshold swing in such devices to improve the ... the Boltzmann equation in terms of scattering matrices,” Solid-State.
#5. peter_michael_garone.part2_.pdf
The subthreshold swing is defined as the change in gate voltage necessary to change ... corresponding effective vertical field using equation 4.3 and the ...
#6. A simple subthreshold swing model for short ... - CiteSeerX
At this point, the calculation of the second derivative in Eq. (2) is straightforward. For a long channel MOSFET in the subthreshold regime, if the mobile ...
#7. How to calculate subthreshold swing? - Movie Cultists
The subthreshold slope is a feature of a MOSFET's current–voltage characteristic. ... A dec (decade) corresponds to a 10 times increase of the drain current ID.
#8. What does the subthreshold swing of a mosfet actually mean?
Subthreshold swing is also the inverse of the subthreshold slope. On a graph of Ids(Vgs) with logarithmic (base 10) axis for Ids the subthreshold slope is found ...
#9. Subthreshold-swing physics of tunnel field-effect transistors
Simplifying 2D Poisson's equation into a 1D form as expressed in Eq. (4) by using Yan's parabolic approximation ...
#10. 2.3.1 - Determination of the On/Off Ratio
The determination of the subthreshold swing or subthreshold slope of ... parameter can be extracted from the equation los = , Colo - VW.
#11. how to calculate the threshold voltage and subthreshold swing ...
"drain") expression need min/max limits for the average calculation? And why don't simply take the intercept of the curve itself (instead of its ...
#12. A Subthreshold Swing Model for Thin-Film Fully Depleted SOI ...
Poisson's equation. Study reveals that the subthreshold swing is a strong function of back-surface charge condition and depends.
#13. A New Method for Extracting Interface Trap Density in Shortâ ...
nel dopant concentration for the calculation of the ... Definition of the subthreshold swing of an arbitrary n-MOSFET in weak inversion region.
#14. Method for extracting subthreshold swing of MOSFET of ...
The analysis model of the subthreshold swing is simple in form and clear in ... Because effective grid voltage expression formula is V gFF=V gS-V fBF, ...
#15. Subthreshold slope Calculator - calculatoratoz.com
Subthreshold slope Solution. STEP 0: Pre-Calculation Summary. Formula Used. subthreshold_slope = Threshold voltage*DIBL ...
#16. Approaching subthreshold-swing limit for thin-film transistors ...
As known, the operation voltage of TFTs is determined by subthreshold swing (SS), which is defined as the change in gate voltage (VG) required ...
#17. Lecture 12 - Sub-threshold MOSFET Operation - MIT ...
Calculation compared with depletion approximation model for t ox. = 3 nm and N ... N(sub threshold ) ... Slope = 60 x n mV/decade*.
#18. Analytic modeling of the subthreshold behavior in MOSFET
This yields a conventional exponential form of the subthreshold current, and the subthreshold swing can be obtained analytically from this current equation.
#19. A simple subthreshold swing model for short channel MOSFETs
Solid-State Electronics 45 (2001) 391±397 A simple subthreshold swing ... the calculation of the second derivative culation which also modi®es the Qdep ...
#20. 2.1 Subthreshold Leakage - IuE, TU Wien
In this equation the factor $\ln(10)$ ... Due to the bulk effect the subthreshold swing of a conventional MOS transistor in bulk technology will always be ...
#21. NBTI Characterization Techniques-Vt shift Measurem ent Dat
14.2 Electrostatic Signature of Interface Traps (Poisson Equation). 14.2.1 Sub-threshold Slope Method. The subthreshold source-drain current ...
#22. EE-612: Lecture 12 Subthreshold Conduction - nanoHUB
Subthreshold Conduction. Mark Lundstrom. Electrical and Computer Engineering. Purdue University. West Lafayette, IN USA. Fall 2006 www.nanohub.org.
#23. Semiconductor Devices and Circuits - infocobuild
Sanjiv Sambandan, IISc Bangalore): Lecture 40 - Subthreshold Swing, ... Lecture 01 - Quantum Mechanics: Concept of Wave Particle, Schrodinger Equation.
#24. Lecture #23 MOSFET I vs. V Characteristic
voltage divider formula. (Lecture 12, Slide 7): p-type Si ... Slope Factor (or Subthreshold Swing) S ... VGS characteristic in the subthreshold region:.
#25. What does the subthreshold swing of a mosfet actually mean
I have found several interpretations of the sub threshold swing.One is " The subthreshold swing of a device is defined as the change in gate voltage which ...
#26. Subthreshold Slope | All About Circuits
The slope of this line is the subthreshold slope. It represents how fast the Ids ramps up for an increase of Vgs. Steep slope means the device ...
#27. Sub-Threshold Region Behavior of Long Channel MOSFET
Re-arranging the above equation and replacing the ψ ... (linear). Subthreshold swing (S). = 1/slope. Sub-Threshold Region Behavior of Long Channel MOSFET ...
#28. On the modelling of temperature dependence of subthreshold ...
subthreshold swing calculation applicable to the situation where the MOSFET drain current should be evaluated from the conductivity function ...
#29. Solved a) What is subthreshold swing (or ... - Chegg
Answer to Solved a) What is subthreshold swing (or subthreshold. ... saturation. d) Which equation can we use to estimate the cutoff frequency of a MOSFET?
#30. Analysis of Subthreshold Swing for Channel Doping of ...
Poisson's equation was used to analyze the subthreshold swing for asymmetric DGMOSFET. Asymmetric DGMOSFET could be fabricated with the different top and ...
#31. the origin of the steep subthreshold-slope in ferroelectric FETs
... capacitance (PC) of ferroelectrics (FE) can explain the steep subthreshold-slope ... This equation describes the equilibrium part of the ...
#32. 亞閾值擺幅:簡介,算法,影響因素 - 中文百科全書
中文名：亞閾值擺幅 · 外文名：Subthreshold swing · 別名：S因子 · 公式：S = dVg / d(logIds) · 單位：mV/dec · 性能指標：開啟關斷速率.
#33. AN ANALYTICAL SUBTHRESHOLD CURRENT/SWING ...
analytical subthreshold current/swing model for junctionless (JL) ... single equation, which helps to determine the subthreshold current by the parameter.
#34. Subthreshold swing improvement in MoS2 transistors ... - CIQM
Obtaining a subthreshold swing (SS) below the thermionic limit of 60 mV dec ... limits the second term in the above formula to ln(10)kT/q,.
#35. Analytical Performance of the Threshold Voltage and ...
the analytical solution of 2D Poisson equation using evanescent-mode analysis ... roll-off, degradation of the subthreshold threshold swing, ...
#36. Nanowire Tunnel FET with Simultaneously Reduced ...
... the thermionic 60 mV/decade of the subthreshold swing (SS) of metal . ... right-hand side of the LK equation, which causes nonlinearity.
#37. arXiv:0912.4106v1 [cond-mat.mtrl-sci] 21 Dec 2009
The onset voltage Von and the subthreshold swing S ... the well-known field-effect transistor equation for the satu- ration regime.
#38. DIBL and Subthreshold Swing Effect on Carbon Nanotube ...
Index Terms—Carbon nanotube, DIBL, subthreshold swing, transistor ... Schrödinger's equation to analyze the density of states and.
#39. subthreshold swing公式 話題討論 - winXmac軟體社群
subthreshold swing 公式話題討論、資訊整理文章，了次臨界斜率(subthreshold swing)ヽ臨界電壓(threshold voltage)...,軟體教學,軟體下載,軟體社群,Windows軟體,Mac ...
#40. how to determine the subthreshold process paramter?
However, I can't find the "m" the subthreshold slope. ... However, even knowing that, it doesn't look to me as if the equation you've described matches any ...
#41. Subthreshold Characteristics of AlGaN/GaN MIS-FinFETs with ...
and improvement of subthreshold swing (SS) [5–10]. It is worth noting that the ... width modulation and expressed as A in Equation (1).
#42. Design of DGMOSFET for Optimum Subthreshold ... - Unpaywall
category of SCEs is the increasing of subthreshold swing, threshold voltage roll-off, ... DOPA: subdirective according to the following formula.
#43. Doping Dependent Subthreshold Swing Modelling of ...
in nature and the 2-D Poission's equation has been solved to obtain the ... subthreshold swing parameter is obtained by the concept of ...
#44. The temperature dependence of subthreshold characteristics ...
interpretation of subthreshold swing coefficient of current-voltage ... In particular, in [9] the formula for the subthreshold swing coefficient is.
#45. Parameter Extraction for Electrolyte-Gated Organic Field Effect ...
The static model of EGOFETs is split into three equation to cover subthreshold, linear and ... estimated with the subthreshold slope [9]. D. Contact Effect.
#46. MOSFET Device
Taguchi method for obtaining the lowest value of subthreshold swing (SS). ... By utilizing formula given in (2), the SNR for each row of experiments were ...
#47. 成果報告資料顯示 - 工程科技推展中心
... 有關『環繞閘極金氧半場效應電晶體含有介面缺陷電荷』之短通道臨界電壓衰減特性(Short-channel Threshold Voltage roll-off) 、次臨界斜率衰減(Subthreshold Swing
#48. Subthreshold channel leakage current in GaAs MESFET's
The Poisson equation is solved analytically in one ... subthreshold drain current and subthreshold swing in MESFET's with undoped.
#49. Electrical characteristics of devices using the IVCharacteristics ...
Calculation and preliminary analysis of the V D G VDG curve. Extending the range of the V D G VDG ... the Subthreshold Slope option from the drop-down menu.
#50. 7. MOSFET operation. What is subthreshold swing (or su…
What is subthreshold swing (or subthreshold slope)? What ' $ the theoretical ... d) Which equation can we use t0 estimate the cutoff frequency of a MOSFET?
#51. UNIVERSITY OF CALIFORNIA, SAN DIEGO Analytical ...
Vt Roll-off, DIBL, and subthreshold slope for double gate operation.......45 ... 1.4 Simplified geometry for analytically solving Poisson's equation in a.
#52. Is negative capacitance FET a steep-slope logic switch? - NCBI
... of the minimum hysteresis-free subthreshold swing (SS), ... Secondly, we derive an unexpectedly concise and insightful formula for the ...
#53. Analytical modeling of threshold voltage and subthreshold ...
th) and subthreshold swing (S) for a tri-gate (TG) heterojunc- ... are analyzed by solving three-dimensional (3-D) Poisson's equation with the aid of ...
#54. Double-gate structure MOSFET (metal-oxide semiconductor ...
... thereby getting the sub-threshold swing analytical model. The model is clear in physical conception, easy to calculate and high in calculation precision ...
#55. The impact of quantum confinement on the electrical ...
... the quantum-mechanical mechanism mainly impacts the subthreshold slope (or the threshold voltage). Due to the quantum-size effect, the off-state current ...
#56. MOSFET的亚阈值摆幅对低温的温度依赖性建模 - X-MOL
A comprehensive analysis of the MOSFET subthreshold swing for a 2D ... Moreover, a generalized subthreshold swing calculation applicable to ...
#57. A Novel Approach to Model Threshold Voltage and ...
The parabolic approximation equation with appropriate ... subthreshold swing characteristics, and DIBL over conventional DG-JLFETs.
#58. Subthreshold Leakage Current Reduction Techniques For ...
The exponential increase of subthreshold leakage drain current with decreasing Vt for a given Vgs is shown in equation. (3). In other words, a transistor ...
#59. 鐵電效應於負電容電晶體與1T記憶體應用 - DSpace at National ...
For break through the physical limitation, the equation of body factor of subthreshold swing must be< 1, the Cins turn into negative ...
#60. Analytical relationship between subthreshold swing of ... - scanR
This formula allows predicting the behaviour of an ultimately scaled MOSFET in the subthreshold regime, as well as the performance of III-V ...
#61. Lecture 3 Transistor Models Overview - Stanford University
subthreshold leakage, scaling (and variations in these parameters) ... Subthreshold slope. • Threshold voltage ... Equation works in both limits.
#62. 國立中山大學電機工程學系碩士論文銦鎵鋅氧薄膜電晶體於負偏 ...
3.1-1 次臨界擺幅(Subthreshold Swing，S.S.). 當閘極電壓低於臨界電壓(Vt)而半導體表面只稍微反轉時，其對應汲極電流. 稱為次臨界電流(Subthreshold Current)，而在次 ...
#63. 3.3.3 Vth Roll-Off, DIBL, and Subthreshold Slope Degradation
3.3.3 Vth Roll-Off, DIBL, and Subthreshold Slope Degradation. The DITS effect is taken into account through the parameter Θ D I T S \Theta_{DITS} ΘDITS.
#64. Analytical Vth, DIBL and Swing with and without Effective ...
In this paper, we figure out the 2D Poisson equation and we analytically ... A comprehensive analytical sub threshold swing (S) for double-gate MOSFETs.
#65. SUB THRESHOLD CURRENT - IDC Technologies
n is the sub threshold swing coefficient,. kB is the Boltzmann constant, ... The delay Td of a CMOS device can be approximated by equation (5).
#66. Influence of the Source Doping Concentration on the ...
The subthreshold swing (S) of tunneling field-effect transistors (TFETs) has been modeled by using the Landauer formula, ...
#67. 亞閾值擺幅(Subthreshold swing)是MOSFET在亞閾狀態工作時
亞閾值擺幅(Subthreshold swing)是MOSFET在亞閾狀態工作時、用作為邏輯開關時的一個重要參數， 又稱為S因子，它定義為:S = dVgs / d(log10 Id)，單位是[mV/dec]。
#68. CHAPTER 2: Physics-Based Derivation of the I-V Model
dimensional Poisson equation in the vertical direction of the channel. ... subthreshold swing is a function of channel length and the ...
#69. Analytical relationship between subthreshold swing of ...
This formula allows predicting the behaviour of an ultimately scaled MOSFET in the subthreshold regime, as well as the performance of III–V ...
#70. IV measurement - University of Warwick
Subthreshold slope (S.S): ... The theoretical value is given by the following equation: ... From equation 2-3 the channel resistance could be define by ...
#71. Si1-xGex Positive Feedback Field-effect Transistor with Steep ...
Steep Subthreshold Swing for Low-voltage Operation. Sungmin Hwang, Hyungjin Kim, ... diode equation, diode current as a function of the applied.
#72. Subthreshold Operation and gm/Id design - CppSim
Key Insights Related to Current Density. ▫ Current density sets the device operating mode. - Weak inversion (subthreshold): highest g.
#73. PhD final manuscript
Equation (1.5) confirms that the kT/q term is limiting the minimum achievable subthreshold slope of MOSFETs to 60 mV/dec at room temperature (300K). It is a.
#74. A Review of MOS Device Physics - Electrical Engineering
This last equation is all we really need to derive the most important equations ... The weak inversion model begins by defining a subthreshold slope ...
#75. CHAPTER 2: Physics-Based Derivation of I-V Model
The development of BSIM3v3 is based on Poisson's equation using gradual ... subthreshold swing is a function of channel length and the ...
#76. Subthreshold slope - formulasearchengine
The subthreshold slope is a feature of a MOSFET's current–voltage characteristic. In the subthreshold region the drain current behaviour ...
#77. SubThreshold Swing(SS), 문턱 전압이하 특성 - 네이버 블로그
SubThreshold Slope 란 말 그대로 Threshold Voltage 보다 작은 전압이 가해짐에도 불구하고 누설전류가 발생해서 생긴 개념입니다.
#78. inverse subthreshold slope: Topics by Science.gov
GaN Nanowire MOSFET with Near-Ideal Subthreshold Slope. ... In this equation, C P D is the photodiode (PD) capacitance and m is a constant.
#79. Re: [問題] MOS的一些問題- 看板Electronics - 批踢踢實業坊
很多人對subthreshold region有迷思尤其是做高速電路大電流習慣的人聽到Vgs. ... mmonkeyboyy:有陣子subthreshold swing研究很多人做 04/18 20:36.
#80. Lecture #16 OUTLINE MOSFET ID vs. VGS characteristic
6 Slope Factor (or Subthreshold Swing) S S is defined to be the inverse slope of the log (ID) vs. VGS characteristic in the subthreshold region: VDS > 0 ...
#81. Chapter 6 金氧半場效電晶體及相關元件 - SlidePlayer
實際上仍有汲極電流，稱為次臨限電流(subthreshold current) 。 ... 定義次臨界擺幅(subthreshold swing)： S越大，表示ID隨VG的變化越小，on-off特性不明顯；S越小， ...
#82. The Electrical Engineering Handbook - 第 116 頁 - Google 圖書結果
As given in equation 3.22, VD, sat increases linearly with VGS. ... n q kT : (3:30) The parameter S in the above equation is the MOSFET subthreshold swing, ...
#83. eng sub meaning. Draw up a chart containing all possible sub ...
2014-10-16 · The subthreshold swing definition describes an ... Since steam and gases are compressible fluids, the formula must be altered .
#84. Physics of Semiconductor Devices: 17th International ...
B. MODELING OF SUBTHRESHOLD SWING Subthreshold swing is basically a ... Therefore, for many simple expression of swing, we have used the following formula ...
#85. Silicon-on-Insulator Technology: Materials to VLSI
Figure 5.8.5 presents the subthreshold slope of an enhancement-mode n-channel ... its upper limit (dotted line A) is obtained using the same equation with .
#86. Advances in Materials Processing and Manufacturing ...
3.5 Subthreshold Swing (SS) The SS in CNTFET is given by the above formula [12]. SS 1⁄4 j d log 10 G dV g À1 ð4Þ For SS, 60 mV/decade at room temperature is ...
#87. Transistor model - onmyphd.com
沒有這個頁面的資訊。
#88. Energy Efficient Thermal Management of Data Centers
Ioff / 10ÀVths: (3.1) According to (3.1), for a given subthreshold swing, ... Equation (3.2) shows the relationship of capacitance (C) with the dielectric ...
#89. Proceedings of the 2nd International Conference on ...
Subthreshold. Swing. (SS). Keeping the overall gate length same as 50 nm for ... therefore using the formula for finding SS swing the comparison report is ...
#90. Silicon-on-Insulator Technology: Materials to VLSI: ...
L 1 Saturation regime : W 1 ( 5.13.2 ) Dsat 2n L It is also found in the expression of the subthreshold swing ( equation 5.7.25 ) : KT S = nIn ( 10 ) ...
#91. 亚阈值摆幅（Subthreshold swing） - 简书
Subthreshold swing is also the inverse of the subthreshold slope. On a graph of Ids(Vgs) with logarithmic (base 10) axis for Ids the ...
#92. UL - Related Searches
Boxed meals; Salad Dressing (all types) Similac Infant Formula; ... 6 6T-FinFET SRAM in PUWG technique in subthreshold swing Enhanced lw for the pull-up ...
#93. Japanese trap metal. Discuss and post trap metal here. This ...
... then dropped into a catch basin filled with an alcohol-based formula that knocks them unconscious. 99. ... The front-channel subthreshold swing (S f) …
#94. 亞閾值擺幅 - 中文百科知識
簡介亞閾值擺幅（Subthreshold swing）， 又稱為S因子。這是MOSFET在亞閾狀態工作時、用作為邏輯開關時的一個重要參數，它定義為： 亞閾.
#95. What is meant by subthreshold slope? - Greedhead.net
The subthreshold slope is a feature of a MOSFET's current–voltage characteristic. In the subthreshold region, the drain current behaviour ...
subthreshold swing formula 在 Re: [問題] MOS的一些問題- 看板Electronics - 批踢踢實業坊 的必吃
※ 引述《xuwei (歸零)》之銘言：
: ※ 引述《iiiikkk (東森媒體科技)》之銘言：
: : 請問MOS我讓它Vod>Vds>Vdsat, 並且Vgs<Vth
: : 此時MOS操作在sub-threshold 區
: : 若電路是current mirror, 會影響到mismatch嗎(如果我給它W*L很大也沒用嗎)?
: : 就我所知Vds>Vdsat就會在是saturation (velocity saturation)
: : 是否一定要將Vds>Vod才安全?
: Mismatch來源
: 1. Beta 2. Vth
: 若操作在subthreshold 區，造成Vgs-Vth<0，造成Vth mismatch這一項變大
: 當然你可以將W*L 取很大將Beta mismatch降低，但是這跟Vth mismatch是兩件事
: 所以囉~對於current mirror設計還是設計在W*L相同的前提下降低W，增加L方式
: 讓它們操作在strong inversion區吧~
: 當然啦~ 進一步降低current mismatch還可以用cascode方式，這些Razavi書上都有講
: 至於LDO喔~ 隨便啦，bias current就算變個+-10%也沒差
很多人對subthreshold region有迷思
尤其是做高速電路大電流習慣的人 聽到Vgs<Vth就覺得你在亂做
MOS根本打不開
而事實上在很多low-power的應用
好啦，uA甚至nA等級的電流對於他們的確是沒有打開XDD
首先要先知道，subthreshold region不可以用二次方公式代
他在first order是一個BJT的exponential model
在 Vgs - Vth < 0 時仍然可以得到正確的電流值
而由於真實的模型過於複雜，我們設計電路一定是看gm/Id這個parameter
gm/Id大表示電路在weak inversion而且不等於2/Vov因為Vov是負值
在二次方公式內若Vgs很靠近Vth會得到無限大的gm這件事情不存在
gm/Id在MOS很難超過25，在電流nA等級才有機會超過30
而gm/Id小表示電路在strong inversion，即一般俗稱saturation region
--
為什麼要看gm/Id? 這對理解mismatch有直接的幫助
用二次方甚至exponential公式去看mismatch的影響比較複雜一些
不如假設電路都在我設定好的操作點去看mismatch，所有的影響都變成一階
首先要先知道 δβ/β 以及 δVth 都跟物理大小(面積根號)直接成反比
beta對電流的影響是直接的，電流轉換成Vos就是除以一個gm
(δI/I) = (δβ/β) yields Vos = (δβ/β)*(I/gm)
Vth對Vos的影響是直接的，轉換成電流的變異就是乘以一個gm
δVos = δVth yields (δI/I) = (δVth)*(gm/I)
對於OP的input pair來講，我們關注的是Vos
若電路操作在weak inversion，I/gm很小，δβ/β的影響微乎其微
所以可以斷定 δVos = δVth
對於current mirror來講，我們關注的是(δI/I)，也就是電流偏移比率
從β來看，假設你的物理大小讓β有1%的mismatch，那電流的mismatch就是1%
從Vth來看，1mV的offset在gm/Id = 25的情況下會直接導致2.5%的mismatch
而在gm/Id = 10的情況只會導致 1%
所以你應該想辦法去降低gm/Id，也就是讓電路操作在strong invertion比較好
--
最後講到很多人的迷思
假設我們永遠都用二次方公式來看mismatch，而且Vth永遠都是500mV
而且Vth的變異量都是1mV
甲同學設計Vgs = 600mV 乙同學設計Vgs = 501mV
根據二次方計算的結果，乙同學的mismatch會導致他電路完全不會動
但是根據實際的model，乙同學可能只比甲同學多了2%的誤差
這一切都是沒有考慮gm/Id惹的禍
當然讓電路操作在strong inversion有其他好處
比如你Rout變大，這正是所有current mirror應該有的理想特性
只是weak inversion，真的，沒那麼嚴重，理論上啦
起碼目前我的電路做在50nA的地方都動得很好
至於obov大所提到的不被亂幹的問題
可能才是做電路最需要學習的
阿彌陀佛
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※ 發信站: 批踢踢實業坊(ptt.cc)
◆ From: 27.105.1.245
※ 編輯: jamtu 來自: 27.105.1.245 (04/18 02:30)
請問一下什麼是sub-threshold swing?
嗯如果是differential跟負回授的電路 比較能夠抵抗製程變異的影響
因為最後誤差都是取決於負回授的比值 以及非理想效應的order
所以low power的電路用在sensor 不可能做single end
上面這個case用二次方公式來看
假設Vth有1mV的誤差而來到501mV，乙同學的電流就是0了
誤差比例無限大
這個case討論的是Id的變異
因果關係不太一樣
我們在電子學裡是得到 gm/ID = 2/Vov
依照這個特性，當VGS很靠近Vth時，gm/ID會爆衝到無限大
完全違背了事實
所以我們必須先假設我們不懂實際的model
但是我們知道在某一個操作點附近，做了小信號模型而產生了gm/ID這樣的東西
那麼輸入端兩邊電壓不匹配，直接乘以gm就是電流的不匹配
你講的沒有錯
所以我強調我是用"小信號分析"的觀點去看
小信號分析的精髓是，先假設他們都在同一個操作點
offset並沒有讓他們操作點出現了偏差 <=> 他們操作的偏差可以用offset表示
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