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... 共有15則留言,7人參與討論,4推0噓11→, 大家好小弟在設計電路時,MOS 因為size比較大進到了Subthreshold region,想請問這區的model 準嗎? ... <看更多>
次臨界電流,或稱次臨界漏電流(英語:subthreshold leakage),是金屬氧化物半導體場效電晶體閘極電壓低於電晶體線性導通所需的閾值電壓、處於截止區(或稱次臨界 ...
#2. 晶體管亞閾狀態_百度百科
晶體管亞閾狀態是MOSFET的一種重要工作狀態(工作模式),又稱為MOSFET的亞閾值區(Subthreshold region)。這是MOSFET的柵極電壓Vgs處在閾值電壓VT以下、又沒有出現 ...
#3. Re: [問題] MOS的一些問題- 看板Electronics - 批踢踢實業坊
很多人對subthreshold region有迷思尤其是做高速電路大電流習慣的人聽到Vgs.
#4. Subthreshold Operation and gm/Id design - CppSim
region of strong inversion (with the device in saturation) ... Saturation Region for Subthreshold Operation. ▫ Saturation occurs at roughly ...
new model that can estimate the threshold voltage fluctuation from drain current mismatch in subthreshold region. The validity of the model is verified.
#6. Lecture 12 - Sub-threshold MOSFET Operation - MIT ...
To see, we calculate the electron charge below threshold (weak inversion): q. N(sub threshold ) ... edge of the depletion region.
#7. 運用次臨界特性之低電壓CMOS參考電壓電路設計 - 中興大學 ...
關鍵字: Bandgap voltage;能隙電壓;Current source generator;Subthreshold region;Voltage reference;電流源產生器;次臨界區;參考電壓. 出版社: 電機工程學系所.
#8. Sub-Threshold Region Behavior of Long Channel MOSFET
Sub-threshold region reflects how fast the MOSFET can switch ... and drain at sub-threshold region (or weak inversion) ... Subthreshold swing (S). = 1/slope.
#9. (PDF) Subthreshold MOSFET transistor amplifier operation
shold simply refer to their regions of operation. As another benefit of operating the MOSFET transistor. in the subthreshold region, the transistor input ...
#10. Subthreshold MOSFET transistor amplifier operation - IEEE ...
In this paper, we will investigate the application of the MOSFET transistor in the subthreshold region as an amplifier, develop the ac small-small ...
#11. 113N. MOSFET Sub-threshold behavior - YouTube
#12. Design rules for subthreshold MOS circuits - Archive ouverte ...
ent substrate bias conditions in the subthreshold region, it is concluded that MM9 performs better than BSIM3v3. Note that.
#13. What is the region of subthreshold transistor when vds is less ...
2018年3月15日 — Operation in subthreshold mode in triode region is just one of these combinations. Independent of subthreshold or strong inversion operation, if ...
#14. Analysis of the subthreshold CMOS logic inverter - Science ...
This condition is known as weak inversion or since VGS is less than Vthn, it is aptly called the subthreshold region. This is in contrast to the strong ...
#15. Device and Circuit Design Challenges in the Digital ... - Hindawi
More recently, design of digital subthreshold logic was investigated with transistors operated in the subthreshold region (supply voltage ( ) less than the ...
#16. What is sub-threshold operation of MOSFET and ... - Quora
Subthreshold region is where the transistor operation around the threshold voltage i.e. a bit below threshold voltage. Working at this region is useful for ...
#17. Digital CMOS Logic Operation in the Sub-Threshold Region
in normal strong inversion region and with other known low- ... CMOS logic family to sub-threshold region, and analyze the sub-threshold characteristics of ...
#18. Device Design in Sub-threshold Region for Ultra Low Power ...
Device Design in Sub-threshold Region for Ultra Low Power Applications [Sharma, Krishna Gopal, Singh, B. P.] on Amazon.com. *FREE* shipping on qualifying ...
#19. Analytical Model for Junctionless Double-Gate FET in ...
Dive into the research topics of 'Analytical Model for Junctionless Double-Gate FET in Subthreshold Region'. Together they form a unique fingerprint.
#20. Ultra-Low Power Static Logic Circuits Design in Subthreshold ...
Scaling supply voltage into the subthreshold region provides significant energy ... environmental factors make it a challenge to design subthreshold circuit.
#21. Lecture #23 MOSFET I vs. V Characteristic
In the subthreshold. (VGS < VT) region,. This is essentially the channel- source pn junction current. (Some electrons diffuse from the source ...
#22. Analysis of XOR Circuits for Ultralow-Power Applications in ...
... XOR Circuits for Ultralow-Power Applications in Deep Subthreshold Region. ... of their output voltage levels at deep subthreshold/low frequency region ...
#23. A STUDY TO IMPROVE SYMMETRICAL CMOS OTA ...
The current transfer characteristic of the CMOS symmetrical OTA, operating in the subthreshold region, depends much more on channel length modulation then ...
#24. Analytical Delay and Variations Modeling in the Subthreshold ...
PVT variations and models variations of analytical delay in the subthreshold region. The proposed model is verified through the simulation on PTM low power ...
#25. Leakage immune modified pass transistor based 8t sram cell ...
To satisfy the low power requirement of the SRAM cells, subthreshold design ... However, in subthreshold region, any CR increment will result in marginal ...
#26. Conventional and sub-threshold operation regimes of CMOS ...
In this region, the supply voltage Vdd is less then the transistor threshold voltage Vt. (Vddsub < Vt). Thus, the drain current is decreased by several orders ...
#27. subthreshold region - List of Frontiers' open access articles
This page contains Frontiers open-access articles about subthreshold region. ... Original Research high field stress become dominant in the subthreshold ...
#28. About: Subthreshold conduction - DBpedia
Subthreshold conduction or subthreshold leakage or subthreshold drain current ... when the transistor is in subthreshold region, or weak-inversion region, ...
#29. Applying sub-threshold circuit techniques to IoT device design
Near-threshold operation happens between the sub-threshold region and the transistor threshold voltage Vth, or around 400 – 700mV for today's ...
#30. New Subthreshold Concepts in 65nm CMOS Technology
circuits utilizing subthreshold region operation are presented. Different circuits are analyzed and simulated for ultra low supply voltages to find the best ...
#31. Analysis of CNTFETs Operating in SubThreshold Region for ...
Carbon Nanotube Field Effect Transistors (CNTFETs) are novel devices that are expected to sustain the transistor scalability while increasing ...
#32. Low Power Latch Designs in Subthreshold Region - 博客來
書名:Low Power Latch Designs in Subthreshold Region,語言:英文,ISBN:9783659160615,頁數:80,作者:Sharma, Krishna Gopal,Choudhary, Abhilasha,Sharma, ...
#33. Modeling and characterization of the low frequency noise ...
An analytical model of the low-frequency noise (LFN) for amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) in the subthreshold region is developed.
#34. Physically Unclonable Function based on Voltage Divider ...
of MOS current on threshold voltage in the subthreshold region is exploited to generate randomness. We present a strong PUF based on voltage divider arrays.
#35. 2.1 Subthreshold Leakage - IuE, TU Wien
The moderate inversion regime is considered a transition region between weak and strong inversion where both current flow mechanisms coincidently exist [65] ...
#36. Subthreshold Region - 英语_读音_用法_例句 - 海词词典
海词词典,最权威的学习词典,为您提供Subthreshold Region的在线翻译,Subthreshold Region是什么意思,Subthreshold Region的真人发音,权威用法和精选例句等。
#37. Design of a 75nW, 0.5V subthreshold complementary ...
In this paper, the potential of op-amps working in subthreshold region is investigated, and well- defined design guidelines to build efficient subthreshold op- ...
#38. Subthreshold stimulation in the region of the slow pathway ...
Subthreshold stimulation delivered to the region of the slow pathway terminates AVNRT with high safety and efficacy. High sensitivity and specificity for ...
#39. subthreshold region of MOSFET - Electronics & Electrical ...
Subthreshold operation is normally used at very low currents for Class A micropower (or nanopower) circuits. Linear power amplifiers operate in the saturation ...
#40. MOSFETs in the Sub-threshold Region (ie a bit below VT)
In the depletion approximation for n-channel MOS structures we have neglected the electrons beneath the gate electrode when the gate voltage is less than ...
#41. Analysis of transition region and accumulation layer effect in ...
Measurements were performed in thin film silicon on insulator (SOI) nMOSFETs and it was observed a transition region in the subthreshold slope, ...
#42. Subthreshold and Near-Threshold Techniques for Ultra-Low ...
subthreshold region, a process known as starving. Despite the differences in supply voltage and transistor geometry between starved gates and ordinary ...
#43. Subthreshold region MOSFET mismatch analysis ... - ProQuest
This dissertation investigates the subthreshold region of operation of the MOS transistor. We describe a new model for the subthreshold and transition ...
#44. Difference between cutoff and subthreshold region of nmosfet?
But why this has a different name?(and a different region in Cadence virtuoso tool) when cutoff and subthreshold both have same behavior?
#45. An NMOS device operating in the subthreshold region has a
An NMOS device operating in the subthreshold region has a ζ of 1.5. What variation in VGS results in a tenfold change in ID? If ID = 10 μA, what is g ...
#46. Low Power Latch Designs in Subthreshold Region - AbeBooks
AbeBooks.com: Low Power Latch Designs in Subthreshold Region: Designs for Portable applications (9783659160615) by Sharma, Krishna Gopal; Choudhary, ...
#47. how to determine the subthreshold process paramter?
The "m" is the subtreshold slope. I ran the DC simulation, use OPT on a MOSFET, I can find a big list of device parameters, region, self-gain, betaeff, ...
#48. CMOS micromachined structures using transistors in the ...
subthreshold region for thermal sensing. The sensor has an area of 70 µm by 70 µm and the sensing transistor is placed inside a suspended plate of.
#49. CMOSedu bad design 10
The gate-source voltage of M1 and M2 is around 75 mV so the devices are operating in the subthreshold. region. Remember (page 150) that the drain current in ...
#50. subthreshold region lecture notes - Faadooengineers
Subthreshold Region : In weak inversion and depletion, the electron charge is small and, thus, the drift current is low. The drain current is dominated by ...
#51. Noise-Induced Dynamics in the Subthreshold Region in ...
For practical thermoacoustic systems (e.g. combustors), which are inherently noisy due to factors such as flow turbulence and combustion noise, ...
#52. Analytical modelling of a Cyl-JLAM MOSFET in the ... - X-MOL
... investigation of the subthreshold behaviour of nanometer-scale devices is ... MOSFET) to analyse its behaviour in the subthreshold region.
#53. Low-Power, Subthreshold Reference Circuits for the Space ...
In this operating region, the transistor's drain-current is exponentially dependent on threshold voltage, therefore any deviations of the ...
#54. Subthreshold Leakage Current Reduction Techniques For ...
drain current modelling is required to predict the leakage current in subthreshold region. There has been a substantial number of modelling for transistor ...
#55. What's All This Subthreshold Stuff, Anyhow? | Electronic Design
Electronicdesign 25863 Rako Subthreshold Promo ... The subthreshold region is the tiny area at low currents and voltages indicated by the ...
#56. SUBTHRESHOLD CONDITION IN MOSFET - EPRA JOURNALS
SUBTHRESHOLD CONDITION IN MOSFET | EPRA International Journal of Research & Development (IJRD)
#57. V. Conclusion and discussion
ecent research has shown that by biasing indium gallium zinc oxide (IGZO) thin-film-transistors (TFTs) in the deep subthreshold region could improve the ...
#58. Can you operate circuits at sub-threshold voltages?
Note that the “poor model fit” region of operation circled above is the sub-threshold region. (Image: Ambiq Micro).
#59. Subthreshold Characteristics of AlGaN/GaN MIS-FinFETs with ...
and improvement of subthreshold swing (SS) [5–10]. ... ID,sub is the channel current in the subthreshold region and d(logID,sub).
#60. Subthreshold current
A subthreshold current flows from source to drain in a MOSFET in the cut-off ... is just below the threshold voltage and region under the gate is depleted.
#61. Subthreshold Region based Linear Feedback Shift Register
(LFSR) in weak inversion region and their performance ... In CMOS circuits subthreshold region of operation allows a.
#62. Biasing CMOS amplifiers using MOS transistors in ... - J-Stage
The implementation of large-valued floating resistive elements using MOS transistors in subthreshold region is addressed. The application of these elements ...
#63. 電晶體亞閾狀態 - 中文百科全書
電晶體亞閾狀態是MOSFET的一種重要工作狀態(工作模式),又稱為MOSFET的亞閾值區(Subthreshold region)。 這是MOSFET的柵極電壓Vgs處在閾值電壓VT以下、又沒有出現 ...
#64. High Frequency Noise Characteristics of RF MOSFETs ... - NXP
behavior in the subthreshold region of the MOSFETs has been ignored. Indeed, the “off” state applications can be found in RF circuits, such as LNAs with ...
#65. Physical Review Letters
Probing the ρ0 Mass Modification in the Subthreshold Region on 3He. G. M. Huber, G. J. Lolos, and Z. Papandreou. Phys. Rev. Lett.
#66. Low Power Latch Designs in Subthreshold Region - Takealot ...
Contrary to conventional methods for power reduction, operation of digital circuits in the subthreshold region minimizes power consumption ...
#67. ENGINEERING and TECHNOLOGY RESEARCH - DPI ...
Design of a Bandgap Voltage Reference Working in Subthreshold Region with Low Voltage, High Precision in a Wide Temperature Range.
#68. A Novel High Performance Low Power Universal Gate ...
A Novel High Performance Low Power Universal Gate Implementation in Subthreshold Region. {tag}. {/tag}. International Journal of Computer Applications.
#69. Improved Nonlinear Subthreshold Region Model For HEMTs
This allows us to model continuous 2-DEG charge concentration as the function of gate voltage covering subthreshold region of the I-V curves.
#70. Characterization of C MOS Flip-Flop in Sub-threshold Region
operation at sub-threshold region is used to characterize the C2MOS Flip-Flop. It has been shown that optimum-timing design should be.
#71. Linearization of Double Balanced Mixer Operated ... - DergiPark
When MOSFETs are operated in subthreshold region, there is lower power dissipation, and it has also been observed that in this region, drain current is ...
#72. Supply and Temperature Independent Voltage Reference ...
... presents a voltage reference circuit, operating in sub-threshold region. ... Temperature Independent Voltage Reference Circuit in Subthreshold Region.
#73. Education Designing in the Subthreshold Region with NGSPICE
Using NGSPICE to visualize effcts of the subthreshold region in MOS design.
#74. [問題] MOS subthreshold region - Electronics | PTT Web
... 共有15則留言,7人參與討論,4推0噓11→, 大家好小弟在設計電路時,MOS 因為size比較大進到了Subthreshold region,想請問這區的model 準嗎?
#75. DC Offset Modeling and Noise Minimization for Differential ...
referred offset voltage for differential amplifier, having the input pair devices in subthreshold region of operation. The formulation has been verified in 0.35 ...
#76. Subthreshold Region MOSFET Mismatch Analysis and ...
Subthreshold Region MOSFET Mismatch Analysis and Modeling for Analog VLSI Systems. Front Cover. Aleksandra Pavasovic. University Microfilms, 1992 - Metal ...
#77. Subthreshold Operated CMOS Analytic Model
circuits operating in subthreshold region. In this region, VDD is less then the transistor threshold voltage (VDDsub < Vt).
#78. A CNTFET universal mixed‐mode biquad active filter in ...
A CNTFET universal mixed‐mode biquad active filter in subthreshold region ... Due to the use of subthreshold transistors biased at ±0.2 V supply voltage, ...
#79. 次臨界區英文- 電機工程- 雙語詞彙 - 三度漢語網
中文詞彙 英文翻譯 出處/學術領域 次臨界區 subthreshold region 【電機工程】 緩流,次臨界流 tranquil flow 【力學名詞辭典】 次臨界速度 subcritical velocity 【力學名詞辭典】
#80. low-power op-amp operating in sub-threshold region with ...
And they found that Op-amp in subthreshold region gives highest value of FOM for power and load capacitor. 1.3 Overview of Thesis. This thesis ...
#81. Medium Modifications of Vector Mesons in the Subthreshold ...
In the subthreshold energy region, defined here as the energy region below the + N →V + N reaction threshold on the free.
#82. Double-gate pentacene thin-film transistor with improved ...
with improved control in subthreshold region. Dimitrios Tsamados1,*, Nenad V. Cvetkovic1, Katrin Sidler2, Jyotshna Bhandari1, Veronica.
#83. High-Resistance Resistor Consisting of a Subthreshold CMOS ...
driven in the subthreshold region of MOSFETs. Its resistance can be con- trolled in a range of 1–1000 MΩ by adjusting a tail current for the differ-.
#84. The Electrical Engineering Handbook - 第 116 頁 - Google 圖書結果
Subthreshold Region : MOSFET in Weak Inversion When the surface potential at the source end is sufficient to form an inversion layer but the band bending is ...
#85. DESIGN OF LOW POWER LOW VOLTAGE CMOS ...
electronic circuits operated in subthreshold region has become an absolutely necessary feature in order to provide efficient benefits by technology scaling.
#86. ECE 606 Lecture 35: MOSFET IV Characteristics I - nanoHUB
Subthreshold Region (VG < Vth) 5. Subthreshold Region (VG < Vth) 00:10:31. 00:00/00:00. Recall the definition of body coefficient (m) 6.
#87. Sub-kT/q Subthreshold-Slope Using Negative Capacitance in ...
The sub-kT/q SS was observed in the weak inversion region at −0.5 V showing ultra-low operating voltage with the highest mobility (250.5 cm 2 / ...
#88. Distribution of Interface States in MOS Systems Extracted by ...
the Subthreshold Current in MOSFETs under Optical Illumination. M. S. Kim, H. T. Kim, S. S. Chi, ... gate voltage in the subthreshold region directly demon-.
#89. Strength of Silicon, Sapphire in the Subthreshold Flaw and ...
... and for soda-lime glass plates containing subthreshold flaws, i.e.. ... of Silicon, Sapphire in the Subthreshold Flaw and Glass Region.
#90. What is meant by subthreshold slope? - Greedhead.net
The subthreshold slope is a feature of a MOSFET's current–voltage characteristic. In the subthreshold region, the drain current behaviour ...
#91. MOSFET(Metal Oxide Semiconductor Field Effect Transistor)
Subthreshold region 에 흐르는 전류인 diffusion current는 매우 작기 때문에 더 많은 정보를 얻어내기 위해서 전류를 log scale로 그린 게이트전압- ...
#92. How to calculate subthreshold swing? - Movie Cultists
The subthreshold slope is a feature of a MOSFET's current–voltage characteristic. In the subthreshold region, the drain current behaviour – though being ...
#93. Memory characteristics of silicon nanowire transistors ...
The 60-mV/dec subthreshold swing (SS) at room temperature is the ... GS = −0.9 V to −1.9 V) are applied, i.e., in the subthreshold region.
#94. Flexible Electronics: Materials and Applications
8.2 indicates, these equations do not correctly represent the drain current in the subthreshold region, where the power-law dependence of the drain current ...
#95. Mitigating Techniques to Reduce Sub-threshold Currents in ...
Mitigating Techniques to Reduce Subthreshold ... The current in this region can be approximated by the expres- sion where and n are empirical parameters, ...
#96. Handbook of Semiconductor Manufacturing Technology
10−4 VD = 2.0V 10−5 Subthreshold region VD = 0.25V 10−6 (A ID 10−7 Triode and saturation region 10–8 10−9 ) 10–10 −0.50 0.00 1.00 1.50 2.00 VT 0.50 VG ...
subthreshold region 在 Re: [問題] MOS的一些問題- 看板Electronics - 批踢踢實業坊 的必吃
※ 引述《xuwei (歸零)》之銘言:
: ※ 引述《iiiikkk (東森媒體科技)》之銘言:
: : 請問MOS我讓它Vod>Vds>Vdsat, 並且Vgs<Vth
: : 此時MOS操作在sub-threshold 區
: : 若電路是current mirror, 會影響到mismatch嗎(如果我給它W*L很大也沒用嗎)?
: : 就我所知Vds>Vdsat就會在是saturation (velocity saturation)
: : 是否一定要將Vds>Vod才安全?
: Mismatch來源
: 1. Beta 2. Vth
: 若操作在subthreshold 區,造成Vgs-Vth<0,造成Vth mismatch這一項變大
: 當然你可以將W*L 取很大將Beta mismatch降低,但是這跟Vth mismatch是兩件事
: 所以囉~對於current mirror設計還是設計在W*L相同的前提下降低W,增加L方式
: 讓它們操作在strong inversion區吧~
: 當然啦~ 進一步降低current mismatch還可以用cascode方式,這些Razavi書上都有講
: 至於LDO喔~ 隨便啦,bias current就算變個+-10%也沒差
很多人對subthreshold region有迷思
尤其是做高速電路大電流習慣的人 聽到Vgs<Vth就覺得你在亂做
MOS根本打不開
而事實上在很多low-power的應用
好啦,uA甚至nA等級的電流對於他們的確是沒有打開XDD
首先要先知道,subthreshold region不可以用二次方公式代
他在first order是一個BJT的exponential model
在 Vgs - Vth < 0 時仍然可以得到正確的電流值
而由於真實的模型過於複雜,我們設計電路一定是看gm/Id這個parameter
gm/Id大表示電路在weak inversion而且不等於2/Vov因為Vov是負值
在二次方公式內若Vgs很靠近Vth會得到無限大的gm這件事情不存在
gm/Id在MOS很難超過25,在電流nA等級才有機會超過30
而gm/Id小表示電路在strong inversion,即一般俗稱saturation region
--
為什麼要看gm/Id? 這對理解mismatch有直接的幫助
用二次方甚至exponential公式去看mismatch的影響比較複雜一些
不如假設電路都在我設定好的操作點去看mismatch,所有的影響都變成一階
首先要先知道 δβ/β 以及 δVth 都跟物理大小(面積根號)直接成反比
beta對電流的影響是直接的,電流轉換成Vos就是除以一個gm
(δI/I) = (δβ/β) yields Vos = (δβ/β)*(I/gm)
Vth對Vos的影響是直接的,轉換成電流的變異就是乘以一個gm
δVos = δVth yields (δI/I) = (δVth)*(gm/I)
對於OP的input pair來講,我們關注的是Vos
若電路操作在weak inversion,I/gm很小,δβ/β的影響微乎其微
所以可以斷定 δVos = δVth
對於current mirror來講,我們關注的是(δI/I),也就是電流偏移比率
從β來看,假設你的物理大小讓β有1%的mismatch,那電流的mismatch就是1%
從Vth來看,1mV的offset在gm/Id = 25的情況下會直接導致2.5%的mismatch
而在gm/Id = 10的情況只會導致 1%
所以你應該想辦法去降低gm/Id,也就是讓電路操作在strong invertion比較好
--
最後講到很多人的迷思
假設我們永遠都用二次方公式來看mismatch,而且Vth永遠都是500mV
而且Vth的變異量都是1mV
甲同學設計Vgs = 600mV 乙同學設計Vgs = 501mV
根據二次方計算的結果,乙同學的mismatch會導致他電路完全不會動
但是根據實際的model,乙同學可能只比甲同學多了2%的誤差
這一切都是沒有考慮gm/Id惹的禍
當然讓電路操作在strong inversion有其他好處
比如你Rout變大,這正是所有current mirror應該有的理想特性
只是weak inversion,真的,沒那麼嚴重,理論上啦
起碼目前我的電路做在50nA的地方都動得很好
至於obov大所提到的不被亂幹的問題
可能才是做電路最需要學習的
阿彌陀佛
--
※ 發信站: 批踢踢實業坊(ptt.cc)
◆ From: 27.105.1.245
※ 編輯: jamtu 來自: 27.105.1.245 (04/18 02:30)
請問一下什麼是sub-threshold swing?
嗯如果是differential跟負回授的電路 比較能夠抵抗製程變異的影響
因為最後誤差都是取決於負回授的比值 以及非理想效應的order
所以low power的電路用在sensor 不可能做single end
上面這個case用二次方公式來看
假設Vth有1mV的誤差而來到501mV,乙同學的電流就是0了
誤差比例無限大
這個case討論的是Id的變異
因果關係不太一樣
我們在電子學裡是得到 gm/ID = 2/Vov
依照這個特性,當VGS很靠近Vth時,gm/ID會爆衝到無限大
完全違背了事實
所以我們必須先假設我們不懂實際的model
但是我們知道在某一個操作點附近,做了小信號模型而產生了gm/ID這樣的東西
那麼輸入端兩邊電壓不匹配,直接乘以gm就是電流的不匹配
你講的沒有錯
所以我強調我是用"小信號分析"的觀點去看
小信號分析的精髓是,先假設他們都在同一個操作點
offset並沒有讓他們操作點出現了偏差 <=> 他們操作的偏差可以用offset表示
... <看更多>